Manufacturer Part NumberMVB50P03HDLT4G
Manufacturer / BrandON Semiconductor
Available Quantity88110 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionINTEGRATED CIRCUIT
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MVB50P03HDLT4G.pdf

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Part Number
MVB50P03HDLT4G
Production Status (Lifecycle)
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Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Last Time Buy
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
25 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100nC @ 5V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
4.9nF @ 25V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-3
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight
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Application
Email for details
Replacement Part
MVB50P03HDLT4G

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Part Number Manufacturer Description
MVB50P03HDLT4G ON Semiconductor INTEGRATED CIRCUIT