Manufacturer Part NumberFDD86113LZ
Manufacturer / BrandON Semiconductor
Available Quantity39900 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 100V 4.2A DPAK-3
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download FDD86113LZ.pdf

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Part Number
FDD86113LZ
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
104 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
285pF @ 50V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 29W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-PAK (TO-252)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
FDD86113LZ

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