1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Diodes - Rectifiers - Single
  5. Products
Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
NGTD15R65F2WP
 ON Semiconductor DIODE GEN PURP 650V DIE ActiveStandard650V
-
2.9V @ 25A
-
-
1µA @ 650V
-
Surface MountDieDie175°C (Max)
NGTD13R120F2SWK
 ON Semiconductor DIODE GEN PURP 1.2KV DIE ActiveStandard1200V
-
2.6V @ 25A
-
-
1µA @ 1200V
-
Surface MountDieDie175°C (Max)
NGTD15R65F2SWK
 ON Semiconductor DIODE GEN PURP 650V DIE ActiveStandard650V
-
2.9V @ 25A
-
-
1µA @ 650V
-
Surface MountDieDie175°C (Max)
SBRB1045G
 ON Semiconductor DIODE SCHOTTKY 45V 10A D2PAK ActiveSchottky45V10A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
NRVBB1645T4G
 ON Semiconductor DIODE SCHOTTKY 45V 16A D2PAK ActiveSchottky45V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
RURP15100-F085
 ON Semiconductor DIODE GEN PURP 1KV 15A TO220AC ActiveStandard1000V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)260ns100µA @ 1000V
-
Through HoleTO-220-2TO-220AC-55°C ~ 175°C
FFSD0665A
 ON Semiconductor 650V 6A SIC SBD ActiveSilicon Carbide Schottky650V11A (DC)1.75V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 650V361pF @ 1V, 100kHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252)-55°C ~ 175°C
NGTD17R120F2WP
 ON Semiconductor DIODE GEN PURP 1.2KV DIE ActiveStandard1200V
-
1.8V @ 35A
-
-
1µA @ 1200V
-
Surface MountDieDie175°C (Max)
RURP1560-F085P
 ON Semiconductor UFR TO220 15A 600V AUTO ActiveStandard600V15A1.5V @ 15AFast Recovery =< 500ns, > 200mA (Io)70ns100µA @ 600V
-
Through HoleTO-220-2TO-220-2-55°C ~ 175°C
NGTD17R120F2SWK
 ON Semiconductor DIODE GEN PURP 1.2KV DIE ActiveStandard1200V
-
1.8V @ 35A
-
-
1µA @ 1200V
-
Surface MountDieDie175°C (Max)
RURP15100-F085P
 ON Semiconductor UFR TO220 15A 1000V AUTO ActiveStandard1000V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)450ns100µA @ 1000V
-
Through HoleTO-220-2TO-220-2-55°C ~ 175°C
NRVB120ESFT3G
 ON Semiconductor DIODE SCHOTTKY 20V 1A SOD123 ActiveSchottky20V1A530mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 20V
-
Surface MountSOD-123SOD-123-65°C ~ 150°C
FFSPF0665A
 ON Semiconductor 650V 6A SIC SBD ActiveSilicon Carbide Schottky650V6A (DC)1.75V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 650V361pF @ 1V, 100kHzThrough HoleTO-220-2 Full PackTO-220F-2FS-55°C ~ 175°C
ISL9R1560P2-F085
 ON Semiconductor DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A2.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)30ns100µA @ 600V
-
Through HoleTO-220-2TO-220AC-55°C ~ 175°C
FFSD0865A
 ON Semiconductor 650V 8A SIC SBD ActiveSilicon Carbide Schottky650V15A (DC)1.75V @ 8ANo Recovery Time > 500mA (Io)0ns200µA @ 650V463pF @ 1V, 100kHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252)-55°C ~ 175°C
FFSPF0865A
 ON Semiconductor 650V 8A SIC SBD ActiveSilicon Carbide Schottky650V8A (DC)1.75V @ 8ANo Recovery Time > 500mA (Io)0ns200µA @ 650V463pF @ 1V, 100kHzThrough HoleTO-220-2 Full PackTO-220F-2FS-55°C ~ 175°C
FFSP05120A
 ON Semiconductor DIODE SCHOTTKY 1.2KV TO220-2 ActiveSilicon Carbide Schottky1200V
-
1.75V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V
-
Through HoleTO-220-2TO-220-2
-
NRVBB4030T4G
 ON Semiconductor DIODE SCHOTTKY 30V 40A D2PAK ActiveSchottky30V40A550mV @ 40AFast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 30V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
RURG3060-F085
 ON Semiconductor DIODE GEN PURP 600V 30A TO247-2 ActiveStandard600V30A1.5V @ 30AFast Recovery =< 500ns, > 200mA (Io)80ns250µA @ 600V
-
Through HoleTO-247-2TO-247-2-55°C ~ 175°C
RURG80100-F085
 ON Semiconductor DIODE GEN PURP 1KV 80A TO247-2 ActiveStandard1000V80A1.9V @ 80AFast Recovery =< 500ns, > 200mA (Io)200ns250µA @ 80V
-
Through HoleTO-247-2TO-247-2-65°C ~ 175°C
FD700
 MICROSS/On Semiconductor DIODE GEN PURP 20V 50MA DIE ActiveStandard20V50mA1.1V @ 50mAStandard Recovery >500ns, > 200mA (Io)700ns50nA @ 20V1pF @ 0V, 1MHzSurface MountDieDie175°C (Max)
MMBD3595
 MICROSS/On Semiconductor DIE DIODE GENERAL PURPOSE Active
-
-
-
-
-
-
-
-
-
-
-
-
MMBD459A
 MICROSS/On Semiconductor DIE DIODE GENERAL PURPOSE Active
-
-
-
-
-
-
-
-
-
-
-
-
FFSH10120A
 ON Semiconductor 1200V 10A SIC SBD ActiveSilicon Carbide Schottky1200V17A (DC)1.75V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V612pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
FFSH1665ADN-F155
 ON Semiconductor 650V 16A SIC SBD ActiveSilicon Carbide Schottky650V11A (DC)
-
No Recovery Time > 500mA (Io)0ns200µA @ 650V463pF @ 1V, 100kHzThrough HoleTO-247-3TO-247-3-55°C ~ 175°C
FFSH2065ADN-F155
 ON Semiconductor 650V 20A SIC SBD ActiveSilicon Carbide Schottky650V13A (DC)
-
No Recovery Time > 500mA (Io)0ns200µA @ 650V575pF @ 1V, 100kHzThrough HoleTO-247-3TO-247-3-55°C ~ 175°C
FFSH2065BDN-F085
 ON Semiconductor 650V 20A SIC SBD GEN1.5 ActiveSilicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns40µA @ 650V421pF @ 1V, 100kHzThrough HoleTO-247-3TO-247-3-55°C ~ 175°C
FFSH3065ADN-F155
 ON Semiconductor 650V 30A SIC SBD ActiveSilicon Carbide Schottky650V23A (DC)
-
No Recovery Time > 500mA (Io)0ns200µA @ 650V887pF @ 1V, 100kHzThrough HoleTO-247-3TO-247-3-55°C ~ 175°C
FFSH3065B-F085
 ON Semiconductor 650V 30A SIC SBD GEN1.5 ActiveSilicon Carbide Schottky650V37A (DC)1.7V @ 30ANo Recovery Time > 500mA (Io)0ns40µA @ 650V1260pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
FFSH20120ADN-F085
 ON Semiconductor 1200V 20A AUTO SIC SBD ActiveSilicon Carbide Schottky1200V15A (DC)
-
No Recovery Time > 500mA (Io)0ns200µA @ 1200V612pF @ 1V, 100kHzThrough HoleTO-247-3TO-247-3-55°C ~ 175°C
FFSH40120A
 ON Semiconductor 1200V 40A SIC SBD ActiveSilicon Carbide Schottky1200V61A (DC)
-
No Recovery Time > 500mA (Io)0ns200µA @ 1200V2250pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
HBL2010BRP
 ON Semiconductor 1 CHANNEL ESD PROTECTOR Active
-
-
-
-
-
-
-
-
-
-
-
-
FDH300
 ON Semiconductor DIODE GEN PURP 125V 200MA DO35 ObsoleteStandard125V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed
-
1nA @ 125V6pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
RURG30100
 ON Semiconductor DIODE GEN PURP 1KV 30A TO247 ObsoleteStandard1000V30A1.8V @ 30AFast Recovery =< 500ns, > 200mA (Io)150ns250µA @ 1000V
-
Through HoleTO-247-2TO-247
-
RURG30120
 ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 ObsoleteStandard1200V30A2.1V @ 30AFast Recovery =< 500ns, > 200mA (Io)150ns250µA @ 1200V
-
Through HoleTO-247-2TO-247-65°C ~ 175°C
RURP15100
 ON Semiconductor DIODE GEN PURP 1KV 15A TO220AC ObsoleteStandard1000V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)125ns100µA @ 1000V
-
Through HoleTO-220-2TO-220AC-65°C ~ 175°C
RURU10060
 ON Semiconductor DIODE GEN PURP 600V 100A TO218 ObsoleteStandard600V100A1.6V @ 100AFast Recovery =< 500ns, > 200mA (Io)100ns250µA @ 600V
-
Through HoleTO-218-1TO-218-65°C ~ 175°C
RURU15060
 ON Semiconductor DIODE GEN PURP 600V 150A TO218 ObsoleteStandard600V150A1.6V @ 150AFast Recovery =< 500ns, > 200mA (Io)100ns250µA @ 600V
-
Through HoleTO-218-1TO-218-65°C ~ 175°C
RURU8060
 ON Semiconductor DIODE GEN PURP 600V 80A TO218 ObsoleteStandard600V80A1.6V @ 80AFast Recovery =< 500ns, > 200mA (Io)85ns250µA @ 600V
-
Through HoleTO-218-1TO-218
-
ISL9R8120P2
 ON Semiconductor DIODE GEN PURP 1.2KV 8A TO220-2L ObsoleteStandard1200V8A3.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)300ns100µA @ 1200V30pF @ 10V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
1N4001RL
 ON Semiconductor DIODE GEN PURP 50V 1A DO41 ObsoleteStandard50V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4002RL
 ON Semiconductor DIODE GEN PURP 100V 1A DO41 ObsoleteStandard100V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4003RL
 ON Semiconductor DIODE GEN PURP 200V 1A DO41 ObsoleteStandard200V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4004RL
 ON Semiconductor DIODE GEN PURP 400V 1A DO41 ObsoleteStandard400V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4005RL
 ON Semiconductor DIODE GEN PURP 600V 1A DO41 ObsoleteStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4006RL
 ON Semiconductor DIODE GEN PURP 800V 1A DO41 ObsoleteStandard800V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4007RL
 ON Semiconductor DIODE GEN PURP 1KV 1A DO41 ObsoleteStandard1000V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
1N4933RL
 ON Semiconductor DIODE GEN PURP 50V 1A DO41 ObsoleteStandard50V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 150°C
1N4934RL
 ON Semiconductor DIODE GEN PURP 100V 1A DO41 ObsoleteStandard100V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 100V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 150°C
1N4935RL
 ON Semiconductor DIODE GEN PURP 200V 1A DO41 ObsoleteStandard200V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 200V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 150°C
  1. 23
  2. 24
  3. 25
  4. 26
  5. 27
  6. 28
  7. 29
  8. 30
  9. 31
  10. 32
Email: [email protected]
Copyrights © 2019 CHIPS IC - Distributor of ON Semiconductor All Rights Reserved