Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
ON Semiconductor DIODE SCHOTTKY 60V 2A SMB ActiveSchottky60V2A630mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 60V
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Surface MountDO-214AA, SMBSMB-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 40V 2A SMB ActiveSchottky40V2A430mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 40V
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Surface MountDO-214AA, SMBSMB-55°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 100V 8A 5DFN ActiveSchottky100V8A900mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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2µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 120V 12A 5DFN ActiveSchottky120V12A830mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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55µA @ 120V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 30V 1A SMA ActiveSchottky30V1A410mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 30V
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Surface MountDO-214AC, SMASMA-55°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 40V 2A SMB ActiveSchottky40V2A430mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 40V
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Surface MountDO-214AA, SMBSMB-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 5A TPFA ActiveStandard600V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)150ns10µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TP-FA150°C (Max)
ON Semiconductor DIODE SCHOTTKY 60V 8A 5DFN ActiveSchottky60V8A800mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 60V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 30V 8A 5DFN ActiveSchottky30V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-40°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 12A 5DFN ActiveSchottky100V12A730mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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55µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 8A TO277-3 ActiveStandard1000V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 1000V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 8A TO277-3 ActiveStandard600V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 600V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 60V 8A 5DFN ActiveSchottky60V8A800mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 60V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 50V 3A DPAK ActiveSchottky50V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 50V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 3A SMC ActiveStandard600V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V
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Surface MountDO-214AB, SMCSMC-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 1A SMA ActiveSchottky100V1A760mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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40µA @ 100V
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Surface MountDO-214AC, SMASMA-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 1A TP ActiveStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V
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Through HoleTO-251-3 Short Leads, IPak, TO-251AATP150°C (Max)
ON Semiconductor DIODE GEN PURP 600V 1A SMB ActiveStandard600V1A2.4V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns20µA @ 600V
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Surface MountDO-214AA, SMBSMB-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 35V 8A DPAK ActiveSchottky35V8A510mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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1.4mA @ 35V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 20V 1A SOD123 ActiveSchottky20V1A530mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 20V
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Surface MountSOD-123SOD-123-65°C ~ 150°C
ON Semiconductor 1200V 8A SIC SBD ActiveSilicon Carbide Schottky1200V22.5A (DC)1.75V @ 8ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V538pF @ 1V, 100kHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 50A TO247-2 ActiveStandard600V50A1.69V @ 50AFast Recovery =< 500ns, > 200mA (Io)163ns100µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 650V 15A TO220-2 ActiveSilicon Carbide Schottky650V15A (DC)1.75V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 650V575pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 650V 13A TO220-2 ActiveSilicon Carbide Schottky650V13A (DC)1.75V @ 8ANo Recovery Time > 500mA (Io)0ns200µA @ 650V463pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 80A TO247-2 ActiveStandard600V80A1.6V @ 80AFast Recovery =< 500ns, > 200mA (Io)90ns250µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 650V 15A TO220-2 ActiveSilicon Carbide Schottky650V15A (DC)1.75V @ 12ANo Recovery Time > 500mA (Io)0ns200µA @ 650V665pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 1.2KV 8A TO220-2 ActiveSilicon Carbide Schottky1200V8A (DC)1.75V @ 8AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 1200V538pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 1.2KV 10A TO220-2 ActiveSilicon Carbide Schottky1200V10A (DC)1.75V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 1200V612pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 650V 16A TO220-2 ActiveSilicon Carbide Schottky650V16A (DC)1.75V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 650V887pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 1.2KV 15A TO220-2 ActiveSilicon Carbide Schottky1200V15A (DC)1.75V @ 15AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 1200V936pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor 650V 20A SIC SBD ActiveSilicon Carbide Schottky650V25A (DC)
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No Recovery Time > 500mA (Io)0ns200µA @ 650V1085pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor 1200V 15A SIC SBD ActiveSilicon Carbide Schottky1200V26A (DC)1.75V @ 15ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V936pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 650V 30A TO220-2 ActiveSilicon Carbide Schottky650V30A (DC)1.75V @ 30AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 650V1705pF @ 1V, 100kHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor 650V 30A SIC SBD ActiveSilicon Carbide Schottky650V26A (DC)
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No Recovery Time > 500mA (Io)0ns200µA @ 650V1705pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 1.2KV 30A TO247-2 ActiveSilicon Carbide Schottky1200V30A (DC)1.75V @ 20ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V1220pF @ 1V, 100KHzThrough HoleTO-247-2TO-247-2
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ON Semiconductor 1200V 30A SIC SBD ActiveSilicon Carbide Schottky1200V46A (DC)
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No Recovery Time > 500mA (Io)0ns200µA @ 1200V1740pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor 1200V 50A SIC SBD ActiveSilicon Carbide Schottky1200V77A (DC)
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No Recovery Time > 500mA (Io)0ns200µA @ 1200V2560pF @ 1V, 100kHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 200V 500MA DO35 ActiveStandard200V500mA1V @ 100mAStandard Recovery >500ns, > 200mA (Io)
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25nA @ 175V6pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 100V 200MA SOT23 Last Time BuyStandard100V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
ON Semiconductor DIODE SCHOTTKY 30V 200MA SOT523 ActiveSchottky30V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 25V10pF @ 1V, 1MHzSurface MountSOT-523SOT-523125°C (Max)
ON Semiconductor DIODE GEN PURP 100V 200MA DO35 ActiveStandard100V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 100V 200MA SOD323 ActiveStandard100V200mA (DC)1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzSurface MountSC-76, SOD-323SOD-323-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 70V 200MA SOT23-3 ActiveStandard70V200mA (DC)1.1V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 80V 200MA DO35 ActiveStandard80V200mA900mV @ 100mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 55V2.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 250V 200MA DO35 Last Time BuyStandard250V200mA1.25V @ 200mASmall Signal =< 200mA (Io), Any Speed50ns100nA @ 200V5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 200V 200MA DO35 ActiveStandard200V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 175V
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Through HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 125V 200MA DO35 ActiveStandard125V200mA1.2V @ 300mASmall Signal =< 200mA (Io), Any Speed60ns50nA @ 100V2.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 150V 500MA DO35 ActiveStandard150V500mA1V @ 100mAStandard Recovery >500ns, > 200mA (Io)
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25µA @ 125V
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Through HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 50V 1A DO41 ActiveStandard50V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 50V
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Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 200V 1A DO41 ActiveStandard200V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 200V
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Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 175°C
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