Manufacturer Part NumberMUN5312DW1T1G
Manufacturer / BrandON Semiconductor
Available Quantity30160 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR PREBIAS NPN/PNP SOT363
Product CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MUN5312DW1T1G.pdf

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Part Number
MUN5312DW1T1G
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363
Weight
Contact us
Application
Email for details
Replacement Part
MUN5312DW1T1G

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