Manufacturer Part NumberFQD10N20LTM
Manufacturer / BrandON Semiconductor
Available Quantity163890 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 200V 7.6A DPAK
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download FQD10N20LTM.pdf

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Part Number
FQD10N20LTM
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 25V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 51W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
FQD10N20LTM

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