Manufacturer Part NumberFQB6N80TM
Manufacturer / BrandON Semiconductor
Available Quantity141700 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 800V 5.8A D2PAK
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download FQB6N80TM.pdf

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Part Number
FQB6N80TM
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.95 Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 25V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 158W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight
Contact us
Application
Email for details
Replacement Part
FQB6N80TM

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