Manufacturer Part NumberFDMS4D0N12C
Manufacturer / BrandON Semiconductor
Available Quantity172830 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionPTNG 120V N-FET PQFN56
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download FDMS4D0N12C.pdf

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Part Number
FDMS4D0N12C
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 370A
Gate Charge (Qg) (Max) @ Vgs
82nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6460pF @ 60V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta), 106W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Weight
Contact us
Application
Email for details
Replacement Part
FDMS4D0N12C

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