Numéro d'article Fabricant / marque Brève description État de la pièceType de diodeTension - DC Reverse (Vr) (Max)Courant - Rectifié moyen (Io)Tension - Avant (Vf) (Max) @ SiLa vitesseTemps de récupération inverse (trr)Courant - Fuite inverse @ VrCapacitance @ Vr, FType de montagePaquet / casPackage de périphérique fournisseurTempérature de fonctionnement - Jonction
ON Semiconductor DIODE SCHOTTKY 20V 3A DPAK ActiveSchottky20V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 20V 3A DPAK ActiveSchottky20V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 30V 3A DPAK ActiveSchottky30V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 800V 8A TO277-3 ActiveStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 800V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 120V 15A TO277-3 ActiveSchottky120V15A790mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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35µA @ 120V
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Surface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 8A TO277-3 ActiveStandard400V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 400V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 300V 1A SMA ActiveStandard300V1A1.1V @ 1AFast Recovery =< 500ns, > 200mA (Io)65ns5µA @ 300V
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Surface MountDO-214AC, SMASMA-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 12A TO277-3 ActiveSchottky100V12A670mV @ 12AFast Recovery =< 500ns, > 200mA (Io)27.33ns100µA @ 100V1124pF @ 4V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 10A 5DFN ActiveSchottky100V10A720mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 6A DPAK ActiveStandard600V6A3V @ 6AStandard Recovery >500ns, > 200mA (Io)30ns30µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
ON Semiconductor 6A 200V ULTRA FAST RECTIFIER Active
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Surface MountTO-277, 3-PowerDFNTO-277-3
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ON Semiconductor DIODE SCHOTTKY 100V 5A DPAK ActiveSchottky100V5A710mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3.5µA @ 100V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 10A 5DFN ActiveSchottky100V10A950mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 60V 4A SMB ActiveSchottky60V4A630mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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Surface MountDO-214AA, SMBSMB-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 200V 3A SMC ActiveSchottky200V3A840mV @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns1mA @ 200V
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Surface MountDO-214AB, SMCSMC-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 60V 20A TO277-3 ActiveSchottky60V20A600mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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320µA @ 60V771pF @ 4V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 1A SOD123 ActiveSchottky100V1A760mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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40µA @ 100V
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Surface MountSOD-123FSOD-123FL-65°C ~ 175°C
ON Semiconductor 10A 200V ULTRA FAST RECTIFIER Active
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Surface MountTO-277, 3-PowerDFNTO-277-3
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ON Semiconductor 10A 400V ULTRA FAST RECTIFIER Active
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Surface MountTO-277, 3-PowerDFNTO-277-3
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ON Semiconductor DIODE SCHOTTKY 45V 20A 5DFN ActiveSchottky45V20A610mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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600µA @ 45V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 4A TO252 ActiveStandard600V4A1.5V @ 4AFast Recovery =< 500ns, > 200mA (Io)60ns100µA @ 600V15pF @ 10V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252AA-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 6A TO252-3 ActiveStandard600V6A2.1V @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns100µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252AA-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A2.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 150V 20A TO277-3 ActiveSchottky150V20A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 150V
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Surface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 200V 3A SMB ActiveSchottky200V3A840mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 200V
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Surface MountDO-214AA, SMBSMB-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 2A SMA ActiveSchottky100V2A790mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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1.5mA @ 100V
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Surface MountDO-214AC, SMASMA-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 45V 20A 5DFN ActiveSchottky45V20A640mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 45V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 30A 5DFN ActiveSchottky100V30A900mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 4A DPAK ActiveStandard600V4A2.1V @ 4AFast Recovery =< 500ns, > 200mA (Io)60ns100µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 200V 4A SMC ActiveSchottky200V4A860mV @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns1mA @ 200V
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Surface MountDO-214AB, SMCSMC-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 15A TO263-2 ActiveStandard600V15A2.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns100µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263 (D²Pak)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 30A TO247-2 ActiveStandard600V30A2.1V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns250µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor 650V 10A SIC SBD ActiveSilicon Carbide Schottky650V18A (DC)1.75V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 650V575pF @ 1V, 100kHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 50A TO247 ActiveStandard600V50A1.54V @ 50AFast Recovery =< 500ns, > 200mA (Io)124ns100µA @ 600V
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Through HoleTO-247-2TO-247-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 50A TO247 ActiveStandard600V50A2.1V @ 50AStandard Recovery >500ns, > 200mA (Io)60ns250µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 1.2KV TO252 ActiveSilicon Carbide Schottky1200V
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1.75V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V612pF @ 1V, 100kHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)
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ON Semiconductor DIODE SCHOTTKY 1.2KV 20A TO220-2 ActiveSilicon Carbide Schottky1200V20A1.75V @ 20ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V1220pF @ 1V, 100KHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V75pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 15A TO220F ActiveStandard600V15A2.6V @ 15AFast Recovery =< 500ns, > 200mA (Io)35ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220F-2L-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 75V 300MA DO35 Last Time BuyStandard75V300mA1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 100V 200MA DO35 ActiveStandard100V200mA1V @ 20mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 75V 300MA DO35 Last Time BuyStandard75V300mA1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)4ns5µA @ 75V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 600V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 200V 8A TO220-2 ActiveStandard200V8A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V
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Through HoleTO-220-2TO-220-2-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 150V 8A TO220AC ActiveStandard150V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 150V
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Through HoleTO-220-2TO-220AC-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 30A TO220-2 ActiveStandard600V30A2.2V @ 30AFast Recovery =< 500ns, > 200mA (Io)90ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220F-2L-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A2.4V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220F-2L-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 30A TO220AB ActiveSchottky100V30A950mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 100V
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Through HoleTO-220-3TO-220AB-40°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 10A TO220F ActiveStandard600V10A2.2V @ 10AFast Recovery =< 500ns, > 200mA (Io)58ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220F-2L-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 30A TO220AC ActiveStandard600V30A2.1V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns250µA @ 600V
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Through HoleTO-220-2TO-220AC-65°C ~ 175°C