Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de diodoVoltaje - DC Reverse (Vr) (Max)Corriente - promedio rectificado (Io)Voltaje - Adelante (Vf) (Máx) @ SiVelocidadTiempo de recuperación inversa (trr)Current - Reverse Leakage @ VrCapacitancia @ Vr, FTipo de montajePaquete / cajaPaquete de dispositivo del proveedorTemperatura de funcionamiento - unión
ON Semiconductor DIODE SCHOTTKY 100V 3A SMC ActiveSchottky100V3A850mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountDO-214AB, SMCSMC (DO-214AB)-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 1A SMA ActiveSchottky100V1A760mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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40µA @ 100V
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Surface MountDO-214AC, SMASMA-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 200V 3A SMC ActiveSchottky200V3A840mV @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns1mA @ 200V
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Surface MountDO-214AB, SMCSMC-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 45V 8A AXIAL ActiveSchottky45V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 45V
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Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 45V 15A 5DFN ActiveSchottky45V15A570mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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120µA @ 45V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 3A DPAK ActiveStandard400V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 3A DO201AD ActiveStandard1000V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 1000V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 3A DO201AD ActiveStandard400V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 50V 3A DO201AD ActiveStandard50V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 50V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 200V 2A AXIAL ActiveStandard200V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 200V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 100V
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Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD ActiveStandard200V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 200V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 100V
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Through HoleDO-201AD, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD ActiveStandard200V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 200V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 400V 3A DO201AD ActiveStandard400V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 400V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 800V 4A SMC ActiveStandard800V4A1.85V @ 4AFast Recovery =< 500ns, > 200mA (Io)100ns25µA @ 800V
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Surface MountDO-214AB, SMCSMC-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 30V 1A AXIAL ActiveSchottky30V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 30V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 30V 3A DO201AD ActiveSchottky30V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 30V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 40V 3A DO201AD ActiveSchottky40V3A525mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 40V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 20V 3A DO201AD ActiveSchottky20V3A475mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 20V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 400V 2A AXIAL ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)65ns5µA @ 400V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 20V 1A AXIAL ActiveSchottky20V1A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 20V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 120V 20A TO277-3 ActiveSchottky120V20A790mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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35µA @ 120V
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Surface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 40V 1A AXIAL ActiveSchottky40V1A600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 40V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 100V 1A AXIAL ActiveStandard100V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 100V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 1A AXIAL ActiveSchottky100V1A790mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
-
Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 4A DO201AD ActiveStandard100V4A890mV @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 200V 4A DO201AD ActiveStandard200V4A890mV @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 50V 1A AXIAL ActiveSchottky50V1A750mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 200V 1A AXIAL ActiveStandard200V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 200V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 50V 4A DO201AD ActiveStandard50V4A890mV @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 6A TO252-3 ActiveStandard600V6A2.1V @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns100µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252AA-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)100ns10µA @ 1000V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 2A AXIAL ActiveStandard1000V2A2.2V @ 2AFast Recovery =< 500ns, > 200mA (Io)100ns10µA @ 1000V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 60V 3A DO201AD ActiveSchottky60V3A740mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 60V
-
Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 4A AXIAL ActiveStandard400V4A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 400V
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Through HoleDO-201AD, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 40V 3A AXIAL ActiveSchottky40V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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600µA @ 40V
-
Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 4A DO201AD ActiveStandard600V4A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 3A DO201AD ActiveSchottky100V3A790mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 100V
-
Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 4A DO201AD ActiveStandard1000V4A1.85V @ 4AFast Recovery =< 500ns, > 200mA (Io)100ns25µA @ 1000V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 8A D2PAK ActiveSchottky100V8A710mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
4.5µA @ 100V600pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 45V 10A D2PAK ActiveSchottky45V10A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 40V 3A DPAK ActiveSchottky40V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 60V 3A DPAK ActiveSchottky60V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 45V 7.5A TO220-2 ActiveSchottky45V7.5A840mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through HoleTO-220-2TO-220-2-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 35V 7.5A TO220-2 ActiveSchottky35V7.5A840mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through HoleTO-220-2TO-220-2-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 45V 8A AXIAL ActiveSchottky45V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 400V 8A TO220AC ActiveStandard400V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 400V
-
Through HoleTO-220-2TO-220AC-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 15A TO220-2 ActiveStandard100V15A1.05V @ 15AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V
-
Through HoleTO-220-2TO-220-2-65°C ~ 175°C
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